On July 25, Lincoln-based Dynex Power Semiconductor R&D Centre building was inaugurated by CSR president Zheng Changhong and chief executive of CSR Zhuzhou Institute Co., Ltd. Ding Rongjun.

Founded in May 2010, the power semiconductor R&D centre is a joint investment of Dynex and TEC. During the past 2 years, R&D centre has gained rapid growth in technology research, product development and talents cultivation through absorbing brilliant talents, promoting international technology cooperation and integrating technology resources. This international and professional power semiconductor technology research and development team is conducting R&D work of a new generation of IGBT, HVDC thyristor and silicon carbide, aiming to meet the need of rail transit, intelligent power system, electric vehicles, new energy resources, industrial current-transformation and other strategic emerging industries. This team also provides strong support for building the most advanced 8-inch IGBT chip production line of China in Zhuzhou, whose purposes are building world-class power semiconductor technology innovation centre, improving R&D capability, grasping core competitiveness in market and realizing rapid and sustainable development.